A. Gautier-Levine, P. Audren, G. Post, M. Favennec, J. Dumas
{"title":"A study of trap related drain lag effects in InP HFETs","authors":"A. Gautier-Levine, P. Audren, G. Post, M. Favennec, J. Dumas","doi":"10.1109/ICIPRM.1996.492382","DOIUrl":null,"url":null,"abstract":"The drain lag effect is a low frequency parasitic response of field effect transistors on III-V semiconductors. HFET devices were fabricated with InP semiconductor and quaternary lattice-matched compound channels, respectively. From the study of the drain lag value of these two types of devices, the importance of proper technological processes is emphasized.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492382","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The drain lag effect is a low frequency parasitic response of field effect transistors on III-V semiconductors. HFET devices were fabricated with InP semiconductor and quaternary lattice-matched compound channels, respectively. From the study of the drain lag value of these two types of devices, the importance of proper technological processes is emphasized.
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