{"title":"Strong negative differential resistance in graphene devices with local strain","authors":"M. Nguyen, V. Nguyen, J. Saint-Martin, P. Dollfus","doi":"10.1109/IWCE.2015.7301954","DOIUrl":null,"url":null,"abstract":"The effects of local uniaxial strain on grapshene devices like single-barrier structure and p-n tunnel diode are investigated. The strain-induced displacement of Dirac points allows us toi suppress and/or control the Klein tunneling and the interband tunneling, which leads to strong effect of negative differential conductance. It is shown that when strain is suitably applied, the peak-to-valley ratio of the current-voltage characteristics can reach of a few hundred at room temperature.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"24 20","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2015.7301954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The effects of local uniaxial strain on grapshene devices like single-barrier structure and p-n tunnel diode are investigated. The strain-induced displacement of Dirac points allows us toi suppress and/or control the Klein tunneling and the interband tunneling, which leads to strong effect of negative differential conductance. It is shown that when strain is suitably applied, the peak-to-valley ratio of the current-voltage characteristics can reach of a few hundred at room temperature.
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