B. Rajendran, M. Breitwisch, R. Cheek, M. Lee, Y. Shih, H. Lung, C. Lam
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引用次数: 6
Abstract
We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/µm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.
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