Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

G. Molas, G. Piccolboni, M. Barci, B. Traoré, J. Guy, G. Palma, E. Vianello, P. Blaise, J. Portal, M. Bocquet, A. Levisse, B. Giraud, J. Noel, M. Harrand, M. Bernard, A. Roule, B. De Salvo, L. Perniola
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引用次数: 6

Abstract

Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment. In this paper, we discuss the potential of RRAM for non-volatile memory applications, among them: storage class memory, embedded memory, programmable logic, mass storage and neuromorphic applications. By means of experimental studies and simulations, we analyze the role of the integrated materials on the memory performances and reliability and try to propose optimized stacks suitable for each targeted application.
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用于非易失性存储器应用的电阻性RAM (RRAM)的功能和可靠性
各种RRAM概念目前正在研究中(基于氧化物的RAM,导电桥式RAM),所有这些概念都显示出基于架构和内存堆栈的优点和缺点。由于规范与应用程序密切相关,因此RRAM技术很可能会绑定到特定的细分市场。在本文中,我们讨论了RRAM在非易失性存储器应用中的潜力,其中包括:存储类存储器,嵌入式存储器,可编程逻辑,大容量存储器和神经形态应用。通过实验研究和仿真,我们分析了集成材料对存储器性能和可靠性的影响,并尝试提出适合每种目标应用的优化堆栈。
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