T. Iwai, H. Shigematsu, H. Yamada, T. Tomioka, S. Sasa, K. Joshin, T. Fujii
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引用次数: 0
Abstract
We report the first demonstration of microwave power performance at an extremely low operation voltage (1.5 V) using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). Fabricated InAlAs/InGaAs DHBTs have a step graded collector structure which suppresses the collector-emitter offset voltage V/sub CE,offset/ of I-V characteristics, enabling us to use power devices at a low operation voltage.
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