Z. Ning, S. Hoste, W. Vanderbauwhede, R. Gillon, M. Tack, P. Raes
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Abstract
This paper presents a novel test structure for the characterisation and modelling of CMOS leakage current, with which all leakage components can be directly extracted automatically and input/output influence is cancelled. The test structure can also be used for measurement of Intrinsic Iddq for defect detection.
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