H. Shin, T. Wetteroth, S. Wilson, G. Harris, D. Schroder, W. Krull, M. Alles
{"title":"Effect of nitrogen and argon anneals on the leakage current of SIMOX TFSOI devices","authors":"H. Shin, T. Wetteroth, S. Wilson, G. Harris, D. Schroder, W. Krull, M. Alles","doi":"10.1109/SOI.1995.526452","DOIUrl":null,"url":null,"abstract":"High temperature annealing treatment is a critical step in SIMOX technology. Inert gases such as Ar or N/sub 2/ can be used during this anneal along with a small amount of oxygen. Characterization of TFSOI near-fully-depleted devices built on Ar and N/sub 2/ annealed SIMOX indicate that, in the N/sub 2/ annealed material, nitrogen atoms may become trapped at the SOI/BOX interface and cause excessive sub-threshold leakage in NMOS devices. This paper will discuss the effect of nitrogen on the device characteristics based on electrical and chemical measurements.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526452","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
High temperature annealing treatment is a critical step in SIMOX technology. Inert gases such as Ar or N/sub 2/ can be used during this anneal along with a small amount of oxygen. Characterization of TFSOI near-fully-depleted devices built on Ar and N/sub 2/ annealed SIMOX indicate that, in the N/sub 2/ annealed material, nitrogen atoms may become trapped at the SOI/BOX interface and cause excessive sub-threshold leakage in NMOS devices. This paper will discuss the effect of nitrogen on the device characteristics based on electrical and chemical measurements.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
