S. Z. Rahaman, Yu-De Lin, P. Gu, Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, K. Tsai, Weisu Chen, Chien-Hua Hsu, Po-tsung Tu, Frederick T. Chen, M. Tsai, T. Ku, Pei-Hua Wang
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引用次数: 2
Abstract
This paper investigates the Ti thickness modulation based simple strategy to regulate the oxygen vacancy concentration in the HfOx film and implemented to realize the resistive switching properties. Accordingly, we demonstrated a way to control the forming voltage, decrease the operation current to sub-μA level, controllable BRS/CRS and to bypass the self-CRS phenomena in Ti/HfOx based 1T1R RRAM devices for future memory applications.
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