Photon Emission Microscopy of HfO2 ReRAM Cells

F. Stellari, E. Wu, T. Ando, M. Frank, P. Song
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引用次数: 3

Abstract

In this paper, we discuss the use of spontaneous Photon Emission Microscopy (PEM) for observing filaments formed in HfO2 Resistive Random Access Memory (ReRAM) cells. A CCD and an InGaAs camera can be used to quickly observe photon emission in both reverse (reset) and forward (set) bias conditions. An electric field model and a uniform Poisson spatial distribution model are used to explain the intensity and location of the experimental data. Single filament fluctuations and multiple filaments are also observed for the first time.
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HfO2 ReRAM细胞的光子发射显微镜
在本文中,我们讨论了使用自发光子发射显微镜(PEM)来观察HfO2电阻性随机存取存储器(ReRAM)细胞中形成的细丝。CCD和InGaAs相机可以在反向(复位)和正向(设置)偏置条件下快速观察光子发射。用电场模型和均匀泊松空间分布模型来解释实验数据的强度和位置。单灯丝波动和多灯丝波动也首次被观测到。
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