{"title":"Temperature dependence of AC floating body effects in PD SOI nMOS","authors":"Y. Tseng, W.M. Huang, C. Hwang, P. Welch, J. Woo","doi":"10.1109/SOI.1999.819841","DOIUrl":null,"url":null,"abstract":"AC floating body effects have significantly impacted SOI analog circuit performance, such as degraded linearity due to the kink on output conductance (G/sub DS/) (Tseng et al., 1998) and higher phase noise due to low-frequency (LF) noise overshoot (Tseng et al., 1998). This is especially true for partially-depleted (PD) SOI MOSFETs. Recent high density integration of CMOS on a single chip increases the power dissipation density, resulting in an increased operating temperature. Only a few papers address the influence of high temperature operation for SOI analog applications (Dessard et al., 1998; Eggermont et al., 1996). In this study, AC floating body effects are explored in a wide temperature range (from 218 K to 423 K).","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"69 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
AC floating body effects have significantly impacted SOI analog circuit performance, such as degraded linearity due to the kink on output conductance (G/sub DS/) (Tseng et al., 1998) and higher phase noise due to low-frequency (LF) noise overshoot (Tseng et al., 1998). This is especially true for partially-depleted (PD) SOI MOSFETs. Recent high density integration of CMOS on a single chip increases the power dissipation density, resulting in an increased operating temperature. Only a few papers address the influence of high temperature operation for SOI analog applications (Dessard et al., 1998; Eggermont et al., 1996). In this study, AC floating body effects are explored in a wide temperature range (from 218 K to 423 K).
交流浮体效应显著影响了SOI模拟电路的性能,例如由于输出电导(G/sub DS/)的扭转而导致线性度下降(Tseng et al., 1998),以及由于低频(LF)噪声超调而导致的更高相位噪声(Tseng et al., 1998)。对于部分耗尽(PD) SOI mosfet尤其如此。最近CMOS在单芯片上的高密度集成增加了功耗密度,导致工作温度升高。只有少数几篇论文讨论了高温运行对SOI模拟应用的影响(Dessard等人,1998;Eggermont et al., 1996)。在本研究中,交流浮体效应在较宽的温度范围内(从218 K到423 K)进行了探索。