Using Higher Accelerating Voltage of SEM to Dig Out Implant Defects

Abstract

Implant defects are difficult to discover because they are not quantified easily and not like bridge or open physical defects to find them by standard FA’s instruments We can get electrical proof but hard to prove the relationship with implant defects. Here we highlight a phenomenon by higher electron beam accelerating voltage of SEM (Scanning Electron Microscope), through the different penetration depth of electrical charges in silicon; we can observe the variation of contrast images at abnormal area of SRAM to verify possible implant defects.