Highly resistive GaInP:Fe/GaAs for selective embedment of GaAs based heterostructures

Abstract

Semi-insulating (SI) substrates and semi-insulating epitaxial layers are very important for current confinement, integration and capacitance minimisation. The authors have demonstrated the fabrication of highly resistive GaInP:Fe. They present resistivity measurements carried out on an n/SI/n structure at temperatures up to 200/spl deg/C. Such a structure should yield reliable resistivity values since it can minimise contact resistance and feasible diffusion of contacting metal into the SI material. We also demonstrate the feasibility of selective regrowth around [110] and [1~10] directional GaAs mesas.