In-depth description for the FA case with Gate-to-Source or Drain short by nanoprobing analysis

Li-Lung Lai, Oscar Zhang, Ling Zhu, Feng Qian, Mason Sun
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Abstract

Nanoprobing analysis has become standard analytical technique in the modern semiconductor FA lab. In this paper, we describe the use of nanoprobing to investigate cases of Gate-to-Source or Gate-to-Drain shorts and follow up the data generated by nanoprobing with physical analysis. The paper provide discussion of the electrical details and the physical mechanisms.
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通过纳米探针分析,对栅源或漏极短的FA病例进行了深入的描述
纳米探针分析已成为现代半导体FA实验室的标准分析技术。在本文中,我们描述了使用纳米探测来研究门到源或门到漏短路的情况,并通过物理分析跟踪纳米探测产生的数据。本文讨论了电学细节和物理机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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