Evaluation of plasma damage in blanket and patterned low-k structures by near-field scanning probe microwave microscope: effect of plasma ash chemistry

A. Urbanowicz, V. V. Talanov, Marianna Pantouvaki, Herbert Struyf, S. Gendt, M. R. Baklanov
{"title":"Evaluation of plasma damage in blanket and patterned low-k structures by near-field scanning probe microwave microscope: effect of plasma ash chemistry","authors":"A. Urbanowicz, V. V. Talanov, Marianna Pantouvaki, Herbert Struyf, S. Gendt, M. R. Baklanov","doi":"10.1109/IITC.2009.5090363","DOIUrl":null,"url":null,"abstract":"The effect of ash chemistry on dielectric constant of blanket and patterned low-k was studied using a near-field scanning probe microwave microscope, known commercially as NeoMetriK™ technology. Two common photoresist ash approaches with the same etch sequence were studied: plasma assisted sublimation of photoresist at elevated temperature and ion-assisted ash at room temperature. The results for blanket low-k agree well with the FTIR and water source ellipsometric porosimetry (WEP) measurements. The amount of sidewall damage measured in patterned structures before metallization confirms the expected trends.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"11 15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The effect of ash chemistry on dielectric constant of blanket and patterned low-k was studied using a near-field scanning probe microwave microscope, known commercially as NeoMetriK™ technology. Two common photoresist ash approaches with the same etch sequence were studied: plasma assisted sublimation of photoresist at elevated temperature and ion-assisted ash at room temperature. The results for blanket low-k agree well with the FTIR and water source ellipsometric porosimetry (WEP) measurements. The amount of sidewall damage measured in patterned structures before metallization confirms the expected trends.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用近场扫描探针微波显微镜评价等离子体对毛毯和图案低k结构的损伤:等离子体灰分化学的影响
使用近场扫描探针微波显微镜(商业上称为NeoMetriK™技术)研究了灰分化学对毡层和图案低k介电常数的影响。研究了两种具有相同蚀刻顺序的光刻胶灰化方法:等离子体辅助高温升华和离子辅助室温灰化。毯状低钾的结果与红外光谱和水源椭偏孔隙度(WEP)测量结果吻合较好。在金属化之前,在图案结构中测量的侧壁损伤量证实了预期的趋势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond New multi-step UV curing process for porogen-based porous SiOC Thin low-k SiOC(N) dielectric / ruthenium stacked barrier technology Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier Co-design of reliable signal and power interconnects in 3D stacked ICs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1