I. Sagnes, G. Le Roux, P. Legay, C. Kazmierski, J. Palmier, J. Debray
{"title":"MOCVD growth assessment of the first all monolithic 1.56 /spl mu/m VCSELs with GaInAlAs/InP system","authors":"I. Sagnes, G. Le Roux, P. Legay, C. Kazmierski, J. Palmier, J. Debray","doi":"10.1109/ICIPRM.1999.773751","DOIUrl":null,"url":null,"abstract":"Using an InP lattice matched InGaAlAs/InAlAs system we have grown in a single epitaxial step the first all-monolithic vertical laser structure on InP substrate. Pulse lasing at 1.56 /spl mu/m has been obtained up to +55/spl deg/C with 45 /spl mu/m diameter planar diodes defined by proton implantation. Thermal resistance of bottom emitting lasers about 420 K/W has been estimated from Fabry-Perot cavity wavelength shift. The reported characterizations indicate the potential of this material system laser for CW operation and for a simple large-scale industrial processing.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Using an InP lattice matched InGaAlAs/InAlAs system we have grown in a single epitaxial step the first all-monolithic vertical laser structure on InP substrate. Pulse lasing at 1.56 /spl mu/m has been obtained up to +55/spl deg/C with 45 /spl mu/m diameter planar diodes defined by proton implantation. Thermal resistance of bottom emitting lasers about 420 K/W has been estimated from Fabry-Perot cavity wavelength shift. The reported characterizations indicate the potential of this material system laser for CW operation and for a simple large-scale industrial processing.
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