Observation of long term potentiation in papain-based memory devices

A. Bag, M. K. Hota, S. Mallik, C. Maiti
{"title":"Observation of long term potentiation in papain-based memory devices","authors":"A. Bag, M. K. Hota, S. Mallik, C. Maiti","doi":"10.1109/IPFA.2014.6898182","DOIUrl":null,"url":null,"abstract":"Biological synaptic behavior in terms of long term potentiation has been observed in papain-based (plant protein) memory devices (memristors) for the first time. Improvement in long term potentiation depends on pulse amplitude and width (duration). Continuous/repetitive dc voltage sweep leads to an increase in memristor conductivity leading to a long term memory in the `learning' processes.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898182","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Biological synaptic behavior in terms of long term potentiation has been observed in papain-based (plant protein) memory devices (memristors) for the first time. Improvement in long term potentiation depends on pulse amplitude and width (duration). Continuous/repetitive dc voltage sweep leads to an increase in memristor conductivity leading to a long term memory in the `learning' processes.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
木瓜基记忆装置的长时程增强观察
在木瓜蛋白酶(植物蛋白)记忆装置(忆阻器)中首次观察到长期增强的生物学突触行为。长期增强的改善取决于脉冲幅度和宽度(持续时间)。连续/重复的直流电压扫描导致记忆电阻器电导率的增加,从而在“学习”过程中产生长期记忆。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On-chip device and circuit diagnostics on advanced technology nodes by nanoprobing Study and mechanism of static scanning laser fault isolation on embed SRAM function fail Detailed package failure analysis on short failures after high temperature storage Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width Gate oxide rupture localization by photon emission microscopy with the combination of Lock-in IR-OBIRCH
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1