Study of Channeling and Self-Sputtering Effects of Ion Implantation - Data and Modeling

S. Qin
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引用次数: 1

Abstract

Channeling effect factor (CEF), self-sputtering effect, and amorphous (a-Si) layer thickness data as a function of ion mass (AMU) were measured and quantified by SIMS measurements, SRIM simulations, and HR-TEM measurements. Least squares fitting algorithm is used to fit measurement data. Good agreements between the modeling fitting curve and the measurement data are demonstrated. CEF is a logarithm function of the ion AMU. Self-sputtering is independent on the ion AMU for constant implant energy and dose. Amorphous (a-Si) layer thickness is a linear function of the ion AMU.
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离子注入的通道和自溅射效应研究——数据和模型
通过SIMS测量、SRIM模拟和HR-TEM测量,测量并量化了通道效应因子(CEF)、自溅射效应和非晶(a- si)层厚度数据作为离子质量(AMU)的函数。采用最小二乘拟合算法对测量数据进行拟合。模型拟合曲线与实测数据吻合良好。CEF是离子AMU的对数函数。在一定的注入能量和剂量下,自溅射不依赖于离子AMU。非晶(a- si)层厚度是离子AMU的线性函数。
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