Matej Horský, P. Nádaždy, E. Dobročka, D. Gregušová, A. Seifertová, J. Dérer, J. Fedor, T. Ščepka, B. Hudec
{"title":"Electrical properties of Pt/TiO2/Pt and Pt/TiO2/TiN structures grown by atomic layer deposition using TTIP and water","authors":"Matej Horský, P. Nádaždy, E. Dobročka, D. Gregušová, A. Seifertová, J. Dérer, J. Fedor, T. Ščepka, B. Hudec","doi":"10.1109/ASDAM55965.2022.9966782","DOIUrl":null,"url":null,"abstract":"Atomic layer deposition (ALD) growth of TiO2 thin films using TTIP and water is discussed in respect to deposition temperature and resulting crystallinity. Metal-insulator-metal devices with anatase- TiO2 ALD thin film dielectrics on TiN or Pt are investigated for their robustness against oxidative and non-oxidative thermal treatments, towards their use as oxide Schottky diodes or memristor selectors.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM55965.2022.9966782","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Atomic layer deposition (ALD) growth of TiO2 thin films using TTIP and water is discussed in respect to deposition temperature and resulting crystallinity. Metal-insulator-metal devices with anatase- TiO2 ALD thin film dielectrics on TiN or Pt are investigated for their robustness against oxidative and non-oxidative thermal treatments, towards their use as oxide Schottky diodes or memristor selectors.
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