Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966755
Ladislav Seliga, J. Pjencak, Y. Takeda, A. Hasegawa, Mitsuru Soma
The paper summarizes optimization of process integration in 0.25 µm modern Bipolar-CMOS-DMOS (BCD) technology with respect to a mechanical stress induced by Shallow Trench Isolation (STI) and Resurf OXide (ROX) during manufacturing. Process optimization by TCAD simulation and silicon experiments is discussed to reduce mechanical stress in the structures and improve yield by reducing leakage current of NMOS devices. Based on simulations results, two solutions to reduce mechanical stress are proposed and evaluated in silicon experiment. The impact of integration changes to other devices in the technology is evaluated as well.
{"title":"Importance of Mechanical Stress Study in STI based BCD Technology","authors":"Ladislav Seliga, J. Pjencak, Y. Takeda, A. Hasegawa, Mitsuru Soma","doi":"10.1109/ASDAM55965.2022.9966755","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966755","url":null,"abstract":"The paper summarizes optimization of process integration in 0.25 µm modern Bipolar-CMOS-DMOS (BCD) technology with respect to a mechanical stress induced by Shallow Trench Isolation (STI) and Resurf OXide (ROX) during manufacturing. Process optimization by TCAD simulation and silicon experiments is discussed to reduce mechanical stress in the structures and improve yield by reducing leakage current of NMOS devices. Based on simulations results, two solutions to reduce mechanical stress are proposed and evaluated in silicon experiment. The impact of integration changes to other devices in the technology is evaluated as well.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115134353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966763
E. Vavrinsky, M. Donoval, M. Micjan, M. Kopani, M. Stremy, T. Závodník, K. Gasparek, D. Vitazkova, H. Kosnacova
Cardiovascular diseases are the leading cause of the death worldwide. They are followed by the third most common cause and that is respiratory disease. Therefore, new methodologies such as seismocardiography (SCG), impedance cardiography (ICG) and phonocardiography (PCG) are beginning to appear [1]. Main goal of this article is to present a concept of a device for simultaneous measurement of electro, impedance, seismic and phono (EISP) cardiography and its application in the diagnosis of heart and respiration activity.
{"title":"Combination of electro / impedance / seismo / phono cardiography in medicine","authors":"E. Vavrinsky, M. Donoval, M. Micjan, M. Kopani, M. Stremy, T. Závodník, K. Gasparek, D. Vitazkova, H. Kosnacova","doi":"10.1109/ASDAM55965.2022.9966763","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966763","url":null,"abstract":"Cardiovascular diseases are the leading cause of the death worldwide. They are followed by the third most common cause and that is respiratory disease. Therefore, new methodologies such as seismocardiography (SCG), impedance cardiography (ICG) and phonocardiography (PCG) are beginning to appear [1]. Main goal of this article is to present a concept of a device for simultaneous measurement of electro, impedance, seismic and phono (EISP) cardiography and its application in the diagnosis of heart and respiration activity.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"268 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123113746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966744
P. Břečka, Tomáš Lajčin, Branislav Murgaš
TOGAF and its modelling language ArchiMate, are the most common standards used for this area of planning, designing, implementation as well as architectural planning. The modelling tool ArchiMate is very popular and advanced, yet it still does not reflect all demands. In this regard, it is essential to point out that there are numerous studies, focusing on its improvement and also the improvement of models for business architecture. Authors tried to enable villages and cities and other potential customers to transparently assign their goals, motivations, requests etc. into a prepared environment/model. The core idea was to use modelling language ArchiMate 3.1., which was complimented with selected features of IT ontology.
{"title":"Ontology web language implementation in the strategic level of ArchiMate language in the context of smart cities","authors":"P. Břečka, Tomáš Lajčin, Branislav Murgaš","doi":"10.1109/ASDAM55965.2022.9966744","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966744","url":null,"abstract":"TOGAF and its modelling language ArchiMate, are the most common standards used for this area of planning, designing, implementation as well as architectural planning. The modelling tool ArchiMate is very popular and advanced, yet it still does not reflect all demands. In this regard, it is essential to point out that there are numerous studies, focusing on its improvement and also the improvement of models for business architecture. Authors tried to enable villages and cities and other potential customers to transparently assign their goals, motivations, requests etc. into a prepared environment/model. The core idea was to use modelling language ArchiMate 3.1., which was complimented with selected features of IT ontology.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116950409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966769
A. Chvála, J. Marek, A. Šatka, J. Chen
Thermo-mechanical simulation study of a power transistor embedded in a printed circuit board (PCB) is presented. The analysis is focused on the optimization of the design to improve the thermal and mechanical reliability performance of the system. Numerical simulations are effectively used in the identification of critical areas in the systems using power transistors embedded in the PCB, and their optimization with respect to lower mechanical strain and better heat transfer, both leading to improved reliability of the final system.
{"title":"Simulation Study of Thermo-Mechanical Properties of Power Transistor Embedded in PCB","authors":"A. Chvála, J. Marek, A. Šatka, J. Chen","doi":"10.1109/ASDAM55965.2022.9966769","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966769","url":null,"abstract":"Thermo-mechanical simulation study of a power transistor embedded in a printed circuit board (PCB) is presented. The analysis is focused on the optimization of the design to improve the thermal and mechanical reliability performance of the system. Numerical simulations are effectively used in the identification of critical areas in the systems using power transistors embedded in the PCB, and their optimization with respect to lower mechanical strain and better heat transfer, both leading to improved reliability of the final system.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123584972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966793
F. Egyenes, F. Gucmann, E. Dobročka, M. Mikolasek, K. Hušeková, M. Ťapajna
Gallium oxide belongs to wide bandgap semiconducting materials with high power and high voltage capabilities. In this work, $Si-doped beta-Ga_2 O_3$ films were prepared using liquid injection metal organic chemical vapor deposition. Various growth conditions $(O_{2}$ flow in deposition chamber, Si-content in liquid precursor, and choice of $Ga$ precursor) were tested with an aim to improve transport properties needed for electronic devices. X-ray diffraction was applied to study structural properties of the films. Thin films underwent UV-VIS transmittance and ellipsometry optical measurements to determine thin films bandgap energies and thickness, respectively. Van der Pauw measurement was used to extract thin films resistivity. Influence of oxygen-poor and oxygen-rich atmosphere during the growth on films resistivity was discussed and indicated possible role of oxygen vacancies on the electron transport of the prepared films. Finally, optimal growth conditions suitable for electronic device manufacture were identified.
{"title":"Transport properties of Si-doped $boldsymbol{beta}-mathbf{Ga}_{boldsymbol{2}}mathbf{O}_{boldsymbol{3}}$ grown by liquid-injection MOCVD","authors":"F. Egyenes, F. Gucmann, E. Dobročka, M. Mikolasek, K. Hušeková, M. Ťapajna","doi":"10.1109/ASDAM55965.2022.9966793","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966793","url":null,"abstract":"Gallium oxide belongs to wide bandgap semiconducting materials with high power and high voltage capabilities. In this work, $Si-doped beta-Ga_2 O_3$ films were prepared using liquid injection metal organic chemical vapor deposition. Various growth conditions $(O_{2}$ flow in deposition chamber, Si-content in liquid precursor, and choice of $Ga$ precursor) were tested with an aim to improve transport properties needed for electronic devices. X-ray diffraction was applied to study structural properties of the films. Thin films underwent UV-VIS transmittance and ellipsometry optical measurements to determine thin films bandgap energies and thickness, respectively. Van der Pauw measurement was used to extract thin films resistivity. Influence of oxygen-poor and oxygen-rich atmosphere during the growth on films resistivity was discussed and indicated possible role of oxygen vacancies on the electron transport of the prepared films. Finally, optimal growth conditions suitable for electronic device manufacture were identified.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129808240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966770
R. Betsema, C. Rops
The increasing waste heat density of chips requires advanced cooling technologies to prevent the chip from overheating. Two phase cooling in microchannels with a pin fin structure is a promising method which can extract high heat fluxes with a relatively low pressure drop. Current models to predict the performance of these devices typically assume a uniform heat flux along the flow direction. However, the local heat flux strongly depends on the local properties of the fluid and the local temperature in the adjacent heat spreader. This paper presents a novel model which couples a 2D analytical temperature field to a flow boiling model to obtain an accurate prediction of the boiling process and the maximum temperature at the chip interface. The effectiveness of the coupled model is demonstrated by an optimization study, which shows the sensitivity of design parameters on the maximum temperature.
{"title":"A coupled model of heat spreading and flow boiling in microchannels","authors":"R. Betsema, C. Rops","doi":"10.1109/ASDAM55965.2022.9966770","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966770","url":null,"abstract":"The increasing waste heat density of chips requires advanced cooling technologies to prevent the chip from overheating. Two phase cooling in microchannels with a pin fin structure is a promising method which can extract high heat fluxes with a relatively low pressure drop. Current models to predict the performance of these devices typically assume a uniform heat flux along the flow direction. However, the local heat flux strongly depends on the local properties of the fluid and the local temperature in the adjacent heat spreader. This paper presents a novel model which couples a 2D analytical temperature field to a flow boiling model to obtain an accurate prediction of the boiling process and the maximum temperature at the chip interface. The effectiveness of the coupled model is demonstrated by an optimization study, which shows the sensitivity of design parameters on the maximum temperature.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121526329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966761
M. Minárik, J. Marek, A. Šatka
The increasing switching speed of wide-band semiconductor requires a high bandwidth current sensing solution. Rogowski coil sensor embedded in the power stage is one of the promising concepts in increasing the system reliability. In this work the design of embedded Rogowski coil is discussed and estimated parameters are experimentally verified.
{"title":"Embedded Rogowski coil for wide bandwidth switch current monitoring","authors":"M. Minárik, J. Marek, A. Šatka","doi":"10.1109/ASDAM55965.2022.9966761","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966761","url":null,"abstract":"The increasing switching speed of wide-band semiconductor requires a high bandwidth current sensing solution. Rogowski coil sensor embedded in the power stage is one of the promising concepts in increasing the system reliability. In this work the design of embedded Rogowski coil is discussed and estimated parameters are experimentally verified.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125732636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966790
J. Marek, J. Kozarik, M. Minárik, A. Chvála, M. Matúš, L. Stuchlíková
This paper investigates the robustness and reliability issues of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The degradation of device characteristics, including the transfer characteristics, drain leakage current $I_{dss}$, and output characteristics, is observed. A significant increase in leakage current was observed after relatively short avalanche stress (UIS stress), and device destruction occurred after 30 million of cycles. Besides the shift of static electrical characteristics, also a change in switching times was observed. The hot carriers injection and trapping into the gate oxide and its interfaces is believed to be responsible for the variation of electrical parameters.
{"title":"SiC Power TrenchMOS Transistor Under Repetitive Avalanche Stress","authors":"J. Marek, J. Kozarik, M. Minárik, A. Chvála, M. Matúš, L. Stuchlíková","doi":"10.1109/ASDAM55965.2022.9966790","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966790","url":null,"abstract":"This paper investigates the robustness and reliability issues of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The degradation of device characteristics, including the transfer characteristics, drain leakage current $I_{dss}$, and output characteristics, is observed. A significant increase in leakage current was observed after relatively short avalanche stress (UIS stress), and device destruction occurred after 30 million of cycles. Besides the shift of static electrical characteristics, also a change in switching times was observed. The hot carriers injection and trapping into the gate oxide and its interfaces is believed to be responsible for the variation of electrical parameters.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128936125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966771
V. Janicek, J. Kroutil, T. Teplý
This paper deals with an overview of mechanical-electrical systems used in generating electrical energy for the purpose of powering secondary systems controlling access control systems. In practice, we can meet them, for example, in administrative buildings, where they serve as sources of electricity for autonomous systems for the authorization of workers in the house. GaN transistors are also beginning to be used in this area and their use leads to higher energy gains.
{"title":"Energy Harvesting in Smart Access Systems - Review","authors":"V. Janicek, J. Kroutil, T. Teplý","doi":"10.1109/ASDAM55965.2022.9966771","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966771","url":null,"abstract":"This paper deals with an overview of mechanical-electrical systems used in generating electrical energy for the purpose of powering secondary systems controlling access control systems. In practice, we can meet them, for example, in administrative buildings, where they serve as sources of electricity for autonomous systems for the authorization of workers in the house. GaN transistors are also beginning to be used in this area and their use leads to higher energy gains.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124586316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-23DOI: 10.1109/ASDAM55965.2022.9966775
M. Husák, A. Budkova, T. Pycha, A. Laposa, V. Povolny, V. Janicek, J. Novak, A. Bouřa, J. Foit
The paper solves the model of the miniature Power supply based on the piezoelectric cantilever. The aim of the future is to further hybrid integration and use of nanotechnology. Contents of the article belongs to the category of renewable energy sources with environment energy conversion into electrical energy. The work is focused on the use in small temperature differences.
{"title":"Micro Power Supply Based on Piezoelectric Effect","authors":"M. Husák, A. Budkova, T. Pycha, A. Laposa, V. Povolny, V. Janicek, J. Novak, A. Bouřa, J. Foit","doi":"10.1109/ASDAM55965.2022.9966775","DOIUrl":"https://doi.org/10.1109/ASDAM55965.2022.9966775","url":null,"abstract":"The paper solves the model of the miniature Power supply based on the piezoelectric cantilever. The aim of the future is to further hybrid integration and use of nanotechnology. Contents of the article belongs to the category of renewable energy sources with environment energy conversion into electrical energy. The work is focused on the use in small temperature differences.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128563603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：