{"title":"Integration of GaN-SiC and GaN-diamond by surface activated bonding methods","authors":"F. Mu, T. Suga","doi":"10.23919/ICEP.2019.8733419","DOIUrl":null,"url":null,"abstract":"Integration of GaN with SiC and diamond is one solution for the heat dissipation of high-power and high-frequency GaN device. In this research, both of GaN-SiC integration and GaN-diamond integration have been realized by surface activated bonding methods at room temperature. The bonding interfaces were investigated to understand the bonding mechanisms.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733419","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Integration of GaN with SiC and diamond is one solution for the heat dissipation of high-power and high-frequency GaN device. In this research, both of GaN-SiC integration and GaN-diamond integration have been realized by surface activated bonding methods at room temperature. The bonding interfaces were investigated to understand the bonding mechanisms.