A Compact and Broadband On-Chip Delay Line Design Based on the Bridged T-Coil

S. R. Mahendra, A. Weisshaar
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引用次数: 1

Abstract

This paper presents a design approach for on-chip realization of compact and broadband delay units based on the bridged T-coil. Closed-form design equations for the bridged T-coil circuit elements are derived from the 2nd order Padé approximation. Standardized delay units are designed having high isolation from adjacent circuitry by use of a guard ring. The main layout parasitics are incorporated into the design and a detailed design procedure together with a parasitic circuit model is presented. Two delay units for 20-ps and 30-ps delay are designed in a TowerSemi 0.18μm SiGe BiCMOS process to demonstrate the design approach. Full-wave electromagnetic simulations demonstrate the flatness of the group delay responses up to 13 GHz for the 20-ps delay and up to 8 GHz for the 30-ps delay, exceeding the bandwidths obtained with the Padé approximation design with negligible increase in insertion loss and negligible ripple in the flat group delay region. The maximum insertion loss in the region with flat group delay is less than 1dB.
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基于桥接t型线圈的紧凑宽带片上延迟线设计
本文提出了一种基于桥接t型线圈的紧凑型宽带延迟单元片上实现的设计方法。利用二阶pad近似导出了桥式t线圈电路元件的封闭设计方程。通过使用保护环,标准化延迟单元设计具有与相邻电路的高度隔离。将主布局寄生电路纳入设计,给出了详细的设计步骤和寄生电路模型。采用TowerSemi 0.18μm SiGe BiCMOS工艺设计了两个20-ps和30-ps延迟单元来演示该设计方法。全波电磁仿真表明,在20-ps延时下,组延迟响应的平坦度为13 GHz,在30-ps延时下,组延迟响应的平坦度为8 GHz,超过了pad近似设计获得的带宽,插入损耗的增加可以忽略不计,平坦组延迟区域的纹波可以忽略不计。平坦群延迟区域的最大插入损耗小于1dB。
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