Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505230
K. Lahbacha, H. Belgacem, W. Dghais, F. Zayer, A. Maffucci
This paper investigates new solutions for improving the performance of high density Resistive Random-Access Memories (RRAM), based on novel architecture and on the use of alternative materials. Starting from the conventional architecture, which integrates in a crossbar structure many elementary cells composed by one diode and one RRAM (1D1R), here an alternative reverse (1D1R-1R1D) architecture is proposed. This solution doubles the number of cells in a fixed volume and makes more efficient the bias management. An accurate electrothermal modeling is here carried out to check the obtained performance in terms of signal and thermal integrity. The use of the proposed architecture, along with a suitable choice of materials, including novel carbon nanomaterials, can solve or at least mitigate the electrical and thermal crosstalk problems, which are known to be critical for the RRAM crossbar configurations. A case-study is carried out, where a 3×3×4 crossbar structure is analyzed by means of a full 3D electrothermal model.
{"title":"High Density RRAM Arrays With Improved Thermal and Signal Integrity","authors":"K. Lahbacha, H. Belgacem, W. Dghais, F. Zayer, A. Maffucci","doi":"10.1109/SPI52361.2021.9505230","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505230","url":null,"abstract":"This paper investigates new solutions for improving the performance of high density Resistive Random-Access Memories (RRAM), based on novel architecture and on the use of alternative materials. Starting from the conventional architecture, which integrates in a crossbar structure many elementary cells composed by one diode and one RRAM (1D1R), here an alternative reverse (1D1R-1R1D) architecture is proposed. This solution doubles the number of cells in a fixed volume and makes more efficient the bias management. An accurate electrothermal modeling is here carried out to check the obtained performance in terms of signal and thermal integrity. The use of the proposed architecture, along with a suitable choice of materials, including novel carbon nanomaterials, can solve or at least mitigate the electrical and thermal crosstalk problems, which are known to be critical for the RRAM crossbar configurations. A case-study is carried out, where a 3×3×4 crossbar structure is analyzed by means of a full 3D electrothermal model.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114733242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505193
Rohan Kumar, Aksh Chordia, AR Aswani, A. James, J. N. Tripathi
This work focuses on the study of variability analysis of a memristor-based crossbar. The memristor crossbars are particularly useful in neuromorphic circuits due to their high power efficiency and low latency. This paper presents a variability analysis of the Roff to Ron ratio due to the change in the parameters of the crossbar cell. A single cell in the crossbar consists of one transistor one memristor (1T1M) based structure. The Zewail-city memristor model is used in the crossbar cell for the analysis. This paper also presents the analysis of the 1T1M structure and 1T1M based crossbar read-write operations. For variability analysis, a stochastic technique named Polynomial Chaos is used and the results are compared with the standard Monte Carlo simulations.
{"title":"Uncertainty Quantification of Memristor Crossbar Array for Vector Matrix Multiplication","authors":"Rohan Kumar, Aksh Chordia, AR Aswani, A. James, J. N. Tripathi","doi":"10.1109/SPI52361.2021.9505193","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505193","url":null,"abstract":"This work focuses on the study of variability analysis of a memristor-based crossbar. The memristor crossbars are particularly useful in neuromorphic circuits due to their high power efficiency and low latency. This paper presents a variability analysis of the Roff to Ron ratio due to the change in the parameters of the crossbar cell. A single cell in the crossbar consists of one transistor one memristor (1T1M) based structure. The Zewail-city memristor model is used in the crossbar cell for the analysis. This paper also presents the analysis of the 1T1M structure and 1T1M based crossbar read-write operations. For variability analysis, a stochastic technique named Polynomial Chaos is used and the results are compared with the standard Monte Carlo simulations.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126413385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505177
A. Maffucci, L. Ferrigno, S. Sibilia, F. Bertocchi, S. Chiodini, F. Cristiano, G. Giovinco
This paper investigates the electrothermal behavior of macroscopic graphene strips, with the aim of modelling the variation of the electrical resistivity with the temperature. Three types of materials are studied, made with different percentage of a low-cost commercial graphene (graphene nanoplatelets). By combining the results coming from an experimental characterization with those given by a numerical simulation, a simple model is derived, where the resistivity is linearly related to the temperature. These materials are found to show a negative temperature coefficient of the resistance in a wide temperature range (−60,+60) °C, that makes them promising for applications such as electronic packages, temperature sensors, thermristors.
{"title":"Electrothermal Modeling and Characterization of Graphene-Based Thin Strips","authors":"A. Maffucci, L. Ferrigno, S. Sibilia, F. Bertocchi, S. Chiodini, F. Cristiano, G. Giovinco","doi":"10.1109/SPI52361.2021.9505177","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505177","url":null,"abstract":"This paper investigates the electrothermal behavior of macroscopic graphene strips, with the aim of modelling the variation of the electrical resistivity with the temperature. Three types of materials are studied, made with different percentage of a low-cost commercial graphene (graphene nanoplatelets). By combining the results coming from an experimental characterization with those given by a numerical simulation, a simple model is derived, where the resistivity is linearly related to the temperature. These materials are found to show a negative temperature coefficient of the resistance in a wide temperature range (−60,+60) °C, that makes them promising for applications such as electronic packages, temperature sensors, thermristors.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"140 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132331157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505204
Aksh Chordia, Surendra Hemaram, J. N. Tripathi
In the design process of integrated circuits, design and process variability plays an important role in the performance of the circuits. In this paper, an automated framework for Variability Analysis of CMOS circuits is proposed using simulated annealing algorithm. A practical study of variability analysis of phase noise in a 2.4 GHz CMOS oscillator is illustrated using this framework. The performance for the proposed framework for Variability Analysis application is validated by comparing it with the conventional Monte Carlo simulations. A significant gain in terms of computational time is reported.
{"title":"An Automated Framework for Variability Analysis using Simulated Annealing","authors":"Aksh Chordia, Surendra Hemaram, J. N. Tripathi","doi":"10.1109/SPI52361.2021.9505204","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505204","url":null,"abstract":"In the design process of integrated circuits, design and process variability plays an important role in the performance of the circuits. In this paper, an automated framework for Variability Analysis of CMOS circuits is proposed using simulated annealing algorithm. A practical study of variability analysis of phase noise in a 2.4 GHz CMOS oscillator is illustrated using this framework. The performance for the proposed framework for Variability Analysis application is validated by comparing it with the conventional Monte Carlo simulations. A significant gain in terms of computational time is reported.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121625214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505207
M. De Stefano, S. Grivet-Talocia
We introduce a multivariate adaptive sampling algorithm for the passivity characterization of parameterized macromodels. The proposed approach builds on existing sampling methods based on adaptive frequency warping for tracking pole-induced variability of passivity metrics, which however are available only for univariate (non-parameterized) models. Here, we extend this approach to the more challenging parameterized setting, where model poles hence passivity violations depend on possibly several external parameters embedded in the macro-model. Numerical examples show excellent performance and speedup with respect to competing approaches.
{"title":"A Multivariate Adaptive Sampling Scheme for Passivity Characterization of Parameterized Macromodels","authors":"M. De Stefano, S. Grivet-Talocia","doi":"10.1109/SPI52361.2021.9505207","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505207","url":null,"abstract":"We introduce a multivariate adaptive sampling algorithm for the passivity characterization of parameterized macromodels. The proposed approach builds on existing sampling methods based on adaptive frequency warping for tracking pole-induced variability of passivity metrics, which however are available only for univariate (non-parameterized) models. Here, we extend this approach to the more challenging parameterized setting, where model poles hence passivity violations depend on possibly several external parameters embedded in the macro-model. Numerical examples show excellent performance and speedup with respect to competing approaches.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"505 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133498081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505194
M. Mehri
In this paper, a stochastic analysis method is proposed for extraction and evaluation of power distribution map (PDM) in system printed circuit board (PCB). This is conducted based on some system-level information including placement and routing geometry, power distribution network (PDN), component package parasitic, and voltage regulator module (VRM). A simple model for power consumption of major constituent blocks of the system, is analytically extracted based on circuit parameters. Verifications are conducted by a specific designed and fabricated board. The proposed approach can be considered as a preliminary verification step of the PCB design flow. In addition, it helps to have a basic consideration about system layout performance.
{"title":"Stochastic Analysis Method for Tree-Type PDNs on Mixed-Signal PCB","authors":"M. Mehri","doi":"10.1109/SPI52361.2021.9505194","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505194","url":null,"abstract":"In this paper, a stochastic analysis method is proposed for extraction and evaluation of power distribution map (PDM) in system printed circuit board (PCB). This is conducted based on some system-level information including placement and routing geometry, power distribution network (PDN), component package parasitic, and voltage regulator module (VRM). A simple model for power consumption of major constituent blocks of the system, is analytically extracted based on circuit parameters. Verifications are conducted by a specific designed and fabricated board. The proposed approach can be considered as a preliminary verification step of the PCB design flow. In addition, it helps to have a basic consideration about system layout performance.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134646032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505215
Thong Nguyen, Bobi Shi, J. Schutt-Ainé
Non-intrusive stochastic analysis of a complex system requires a fast deterministic solver to simulate the mapping between the input and output. Different machine learning methods, namely Partial Least Square regression, Gaussian Process, and Polynomial Chaos expansion can be used to represent the input - output mapping. Once they are trained to learn the mapping, they are used to replace the expensive process that generates the output given an input, such as a full-wave electrogmanetic solver. Aforementioned methods are compared in this paper when trained on a simple high-speed link.
{"title":"Comparative study of Machine Learning methods for variability analysis in High-speed link","authors":"Thong Nguyen, Bobi Shi, J. Schutt-Ainé","doi":"10.1109/SPI52361.2021.9505215","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505215","url":null,"abstract":"Non-intrusive stochastic analysis of a complex system requires a fast deterministic solver to simulate the mapping between the input and output. Different machine learning methods, namely Partial Least Square regression, Gaussian Process, and Polynomial Chaos expansion can be used to represent the input - output mapping. Once they are trained to learn the mapping, they are used to replace the expensive process that generates the output given an input, such as a full-wave electrogmanetic solver. Aforementioned methods are compared in this paper when trained on a simple high-speed link.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124892748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505176
P. Manfredi, R. Trinchero
This paper introduces a probabilistic nonparametric surrogate model based on Gaussian process regression to perform uncertainty quantification tasks with the inclusion of confidence bounds on the predicted statistics. The performance of the proposed method is compared against two state-of-the-art techniques, namely the parametric sparse polynomial chaos expansion and the nonparametric least-square support vector machine regression.
{"title":"A Nonparametric Surrogate Model for Stochastic Crosstalk Analysis Including Confidence Bounds","authors":"P. Manfredi, R. Trinchero","doi":"10.1109/SPI52361.2021.9505176","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505176","url":null,"abstract":"This paper introduces a probabilistic nonparametric surrogate model based on Gaussian process regression to perform uncertainty quantification tasks with the inclusion of confidence bounds on the predicted statistics. The performance of the proposed method is compared against two state-of-the-art techniques, namely the parametric sparse polynomial chaos expansion and the nonparametric least-square support vector machine regression.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126605301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505183
S. Chen, Zhefei Xu
This work studies the sensitivity of ENRZ (Ensemble NRZ) to inter-wire skews, in comparison to NRZ (Non-Return-to-Zero), PAM4 (Pulse Amplitude Modulation of 4-level), and PAM3. Two typical skew patterns across the four-wire of a ENRZ channel is investigated. The simulation results and the underlying causes are analyzed. The performances of the four signaling techniques with respect to skew are compared. The result shows that due to its intrinsic algorithm, ENRZ is more robust than the other three competitors in terms of keeping the eye open even under sever skews.
{"title":"The Sensitivity of ENRZ to Skew - In Comparison to NRZ, PAM3, and PAM4","authors":"S. Chen, Zhefei Xu","doi":"10.1109/SPI52361.2021.9505183","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505183","url":null,"abstract":"This work studies the sensitivity of ENRZ (Ensemble NRZ) to inter-wire skews, in comparison to NRZ (Non-Return-to-Zero), PAM4 (Pulse Amplitude Modulation of 4-level), and PAM3. Two typical skew patterns across the four-wire of a ENRZ channel is investigated. The simulation results and the underlying causes are analyzed. The performances of the four signaling techniques with respect to skew are compared. The result shows that due to its intrinsic algorithm, ENRZ is more robust than the other three competitors in terms of keeping the eye open even under sever skews.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"481 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116901733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-05-10DOI: 10.1109/SPI52361.2021.9505209
Se-jung Moon, Zuoguo Wu, M. Mazumder
PCI SIG (peripheral component interconnect special interest group) adapted the ccICN (component contribution integrated crosstalk noise) for PCIe CEM (card electromechanical) specification in limiting the connector crosstalk for 32Gbps NRZ (non-return to zero). The usage resolved issues and limitations of the traditional methodology based upon the limit line-based specification. When PCIe 6.0 utilizes the PAM-4 modulation scheme, the ccICN is generalized for component crosstalk assessment for PAM-N (pulse-amplitude modulation-N levels). In this paper, we introduce the generalized ccICN methodology and validate.
{"title":"Generalized ccICN (component contribution Integrated Crosstalk Noise) for PAM-N","authors":"Se-jung Moon, Zuoguo Wu, M. Mazumder","doi":"10.1109/SPI52361.2021.9505209","DOIUrl":"https://doi.org/10.1109/SPI52361.2021.9505209","url":null,"abstract":"PCI SIG (peripheral component interconnect special interest group) adapted the ccICN (component contribution integrated crosstalk noise) for PCIe CEM (card electromechanical) specification in limiting the connector crosstalk for 32Gbps NRZ (non-return to zero). The usage resolved issues and limitations of the traditional methodology based upon the limit line-based specification. When PCIe 6.0 utilizes the PAM-4 modulation scheme, the ccICN is generalized for component crosstalk assessment for PAM-N (pulse-amplitude modulation-N levels). In this paper, we introduce the generalized ccICN methodology and validate.","PeriodicalId":440368,"journal":{"name":"2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132047558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：