{"title":"A 135–170 GHz power amplifier in an advanced sige HBT technology","authors":"N. Sarmah, B. Heinemann, U. Pfeiffer","doi":"10.1109/RFIC.2013.6569584","DOIUrl":null,"url":null,"abstract":"Summary form only given. High-power, broadband power amplifiers (PA) operating in the D-band (110-170 GHz) are essential towards implementation of broadband frequency multiplier chains at sub-mmWave frequencies. In this paper we present the design of a 3-stage power amplifier (PA) with 3-dB bandwidth of 35 GHz (135-170 GHz) and implemented in 130 nm SiGe BiCMOS technology. A staggered tuning approach where the peak gain of the individual or group of individual stages are tuned at offset frequencies is used for broadband operation. In the 135-170 GHz, the small signal gain for the PA is 14-17 dB and the saturated output power (Psat) varies from 5-8 dBm and the output referred 1 dB compression point (P1dB) varies from 1-6 dBm over this frequency range. The nominal dc power consumption of this PA is 320 mW with peak PAE of 1.6%. To our best knowledge, this is the highest bandwidth reported for silicon PAs in the D band.","PeriodicalId":203521,"journal":{"name":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2013.6569584","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42
Abstract
Summary form only given. High-power, broadband power amplifiers (PA) operating in the D-band (110-170 GHz) are essential towards implementation of broadband frequency multiplier chains at sub-mmWave frequencies. In this paper we present the design of a 3-stage power amplifier (PA) with 3-dB bandwidth of 35 GHz (135-170 GHz) and implemented in 130 nm SiGe BiCMOS technology. A staggered tuning approach where the peak gain of the individual or group of individual stages are tuned at offset frequencies is used for broadband operation. In the 135-170 GHz, the small signal gain for the PA is 14-17 dB and the saturated output power (Psat) varies from 5-8 dBm and the output referred 1 dB compression point (P1dB) varies from 1-6 dBm over this frequency range. The nominal dc power consumption of this PA is 320 mW with peak PAE of 1.6%. To our best knowledge, this is the highest bandwidth reported for silicon PAs in the D band.
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