B. Sermage, J. Benchimol, J. Michel, F. Alexandre, P. Launay, D. Caffin
{"title":"Carrier lifetime in carbon doped In/sub 0.53/Ga/sub 0.47/As","authors":"B. Sermage, J. Benchimol, J. Michel, F. Alexandre, P. Launay, D. Caffin","doi":"10.1109/ICIPRM.1996.492312","DOIUrl":null,"url":null,"abstract":"Carrier lifetime has been measured in carbon doped CBE grown In/sub 0.53/Ga/sub 0.47/As by time resolved luminescence with 3 ps resolution. For doping levels between 3.10/sup 18/ cm/sup -3/ and 7.10/sup 19/ cm/sup -3/, the lifetime varies between 400 and 4 picoseconds. This strong decrease is attributed to Auger recombination and induces a limitation on the DC current gain and the base sheet resistance in heterojunction bipolar transistors.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Carrier lifetime has been measured in carbon doped CBE grown In/sub 0.53/Ga/sub 0.47/As by time resolved luminescence with 3 ps resolution. For doping levels between 3.10/sup 18/ cm/sup -3/ and 7.10/sup 19/ cm/sup -3/, the lifetime varies between 400 and 4 picoseconds. This strong decrease is attributed to Auger recombination and induces a limitation on the DC current gain and the base sheet resistance in heterojunction bipolar transistors.
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