A CNTFET Based Quaternary Ful1 Adder

Krishna Chaitanya Sankisa, R. Sahoo, S. K. Sahoo
{"title":"A CNTFET Based Quaternary Ful1 Adder","authors":"Krishna Chaitanya Sankisa, R. Sahoo, S. K. Sahoo","doi":"10.1109/ICDCSYST.2018.8605139","DOIUrl":null,"url":null,"abstract":"The Adder is one of the most important and basic units of arithmetic logics which is used to design many complex circuits. Till now, all arithmetic circuits are mostly use CMOS circuits for binary logic implementation. Recently Carbon nanotube field effect transistor (CNTFET) has attracted many researchers as its threshold voltage can be varied by changing the diameter of carbon nanotube which makes it useful for designing multivalued logic circuits. Exploring this property of CNTFET, few researchers have designed ternary adders. In this work, first time a Quaternary full adder using CNTFET based of circuit is proposed. The proposed circuit is designed based on the conventional CMOS architecture with utilization of inherent binary nature (0,1) of input carry signal. Since voltage at the output of the dynamic logic circuit is stored on a parasitic capacitance, a quaternary keeper circuit is used to alleviate charge sharing problems. The proposed design of Quaternary full adder circuit is simulated using HSPICE simulator with 14 nm Stanford CNTFET model. This adder consumes 103.18 nw power and has delay of 17.46 psec. This is a first effort to design a quaternary logic adder circuit.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2018.8605139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The Adder is one of the most important and basic units of arithmetic logics which is used to design many complex circuits. Till now, all arithmetic circuits are mostly use CMOS circuits for binary logic implementation. Recently Carbon nanotube field effect transistor (CNTFET) has attracted many researchers as its threshold voltage can be varied by changing the diameter of carbon nanotube which makes it useful for designing multivalued logic circuits. Exploring this property of CNTFET, few researchers have designed ternary adders. In this work, first time a Quaternary full adder using CNTFET based of circuit is proposed. The proposed circuit is designed based on the conventional CMOS architecture with utilization of inherent binary nature (0,1) of input carry signal. Since voltage at the output of the dynamic logic circuit is stored on a parasitic capacitance, a quaternary keeper circuit is used to alleviate charge sharing problems. The proposed design of Quaternary full adder circuit is simulated using HSPICE simulator with 14 nm Stanford CNTFET model. This adder consumes 103.18 nw power and has delay of 17.46 psec. This is a first effort to design a quaternary logic adder circuit.
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基于cnfet的四元全加法器
加法器是算术逻辑中最重要、最基本的单元之一,用于设计许多复杂的电路。到目前为止,所有的算术电路大多采用CMOS电路来实现二进制逻辑。近年来,碳纳米管场效应晶体管(CNTFET)因其可以通过改变碳纳米管的直径来改变阈值电压而引起了人们的广泛关注,这对于设计多值逻辑电路非常有用。探索CNTFET的这一特性,很少有研究者设计三元加法器。本文首次提出了一种基于电路的四元全加法器。该电路是在传统CMOS结构的基础上,利用输入进位信号固有的二进制特性(0,1)设计的。由于动态逻辑电路的输出电压存储在寄生电容上,因此采用四元保持电路来缓解电荷共享问题。采用14nm Stanford CNTFET模型,利用HSPICE模拟器对所设计的四元全加法器电路进行了仿真。该加法器功耗为103.18 nw,延迟为17.46 psec。这是第一次尝试设计一个四元逻辑加法器电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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