A. Chvála, J. Marek, J. Kozarik, A. Messina, V. Vinciguerra, D. Donoval
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引用次数: 0
Abstract
An optimization of electrical, thermal, and mechanical properties of SiC MOSFET transistors supported by advanced effective 3-D electro-thermal device simulation is presented. The developed simulation method is capable of a full analysis of complex structures with a high speed of simulation and simple implementation. The simulation method is utilized for electrical and thermal analysis of power SiC MOSFET. Two bonding methods of SiC MOSFET transistor are analyzed and compared. Simulation results demonstrated that the optimized clip-bond concept has better electrical and thermal performance than the wire-bond.
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