{"title":"The off leakage in SOI-MOS transistors and the impact on the standby current of ULSI's","authors":"A. Adan, K. Higashi, K. Nimi, T. Ashida","doi":"10.1109/SOI.1999.819845","DOIUrl":null,"url":null,"abstract":"Summary form only given. The application of SOI-CMOS to low-voltage, battery-powered devices is facing the practical trade-off between low threshold voltage and off-state leakage current. For typical portable electronic equipment, the specification for standby power dissipation restricts the MOSFET off-current to I/sub doff/<10 pA//spl mu/m, which should be compared with I/sub doff//spl sim/1 nA//spl mu/m in high-speed microprocessors (Leonbandung et al., 1998). In this paper, we investigate the off-current mechanism in SOI MOSFETs and its relationship with the IC's standby current for quantitative modeling. The model parameter extraction techniques are also described.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Summary form only given. The application of SOI-CMOS to low-voltage, battery-powered devices is facing the practical trade-off between low threshold voltage and off-state leakage current. For typical portable electronic equipment, the specification for standby power dissipation restricts the MOSFET off-current to I/sub doff/<10 pA//spl mu/m, which should be compared with I/sub doff//spl sim/1 nA//spl mu/m in high-speed microprocessors (Leonbandung et al., 1998). In this paper, we investigate the off-current mechanism in SOI MOSFETs and its relationship with the IC's standby current for quantitative modeling. The model parameter extraction techniques are also described.
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