{"title":"Low-power SRAM circuit design","authors":"M. Margala","doi":"10.1109/MTDT.1999.782692","DOIUrl":null,"url":null,"abstract":"This paper presents an extensive summary of the latest developments in low-power circuit techniques and methods for Static Random Access Memories. The key techniques in power reduction in both active and standby modes are: capacitance reduction by using divided word-line structure or single-bitline cross-point cell activation, pulse operation by using ATD generator and reduced signal swings on high-capacitance predecode lines, write bus lines and datalines, AC current reduction by using multistage decoding, operating voltage reduction coupled with low-power sensing by using charge-transfer amplification, step-down boosted word-line scheme or full current-mode read/write operation and leakage current suppression by using dual-Vt, Auto-Backgate-Controlled multiple-Vt, or dynamic leakage cut-off techniques.","PeriodicalId":166999,"journal":{"name":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"57","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1999.782692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 57
Abstract
This paper presents an extensive summary of the latest developments in low-power circuit techniques and methods for Static Random Access Memories. The key techniques in power reduction in both active and standby modes are: capacitance reduction by using divided word-line structure or single-bitline cross-point cell activation, pulse operation by using ATD generator and reduced signal swings on high-capacitance predecode lines, write bus lines and datalines, AC current reduction by using multistage decoding, operating voltage reduction coupled with low-power sensing by using charge-transfer amplification, step-down boosted word-line scheme or full current-mode read/write operation and leakage current suppression by using dual-Vt, Auto-Backgate-Controlled multiple-Vt, or dynamic leakage cut-off techniques.