Interconnection with copper pillar bumps : Process and applications

C. Lee
{"title":"Interconnection with copper pillar bumps : Process and applications","authors":"C. Lee","doi":"10.1109/IITC.2009.5090391","DOIUrl":null,"url":null,"abstract":"Flipchip technologies have been evolved to grab the major portion of the high and medium performance markets, where the bump interconnections are required. Bumps can be diverse in their contents, that is, binary, ternary, etc.. The most popular alloy is SnPb (eutectic), while the environmental importance pushes the market to adapt the green solution where SnAg or SnCu can be one of the choice. Considering the electrical performance including electro-migration effect and simplicity of the process, Cu bumps is chosen to be an alternative. In this presentation, the Cu pillar bump will be introduced embracing the fine pitch (less than 50 um) process and applications.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"318 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090391","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

Abstract

Flipchip technologies have been evolved to grab the major portion of the high and medium performance markets, where the bump interconnections are required. Bumps can be diverse in their contents, that is, binary, ternary, etc.. The most popular alloy is SnPb (eutectic), while the environmental importance pushes the market to adapt the green solution where SnAg or SnCu can be one of the choice. Considering the electrical performance including electro-migration effect and simplicity of the process, Cu bumps is chosen to be an alternative. In this presentation, the Cu pillar bump will be introduced embracing the fine pitch (less than 50 um) process and applications.
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铜柱凸点互连:工艺和应用
倒装芯片技术已经发展到占据高、中性能市场的主要部分,在这些市场中,需要bump互连。bump的内容可以是多种多样的,即二进制的、三元的等。最受欢迎的合金是SnPb(共晶),而环境重要性推动市场适应绿色解决方案,其中SnAg或SnCu可以成为选择之一。考虑到电学性能,包括电迁移效应和工艺的简单性,我们选择了铜凸起作为替代方案。在本次演讲中,将介绍铜柱凸点,包括细间距(小于50微米)的工艺和应用。
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