{"title":"A SOI current memory for analog signal processing at high temperature","authors":"L. Portmann, M. Declercq","doi":"10.1109/SOI.1999.819837","DOIUrl":null,"url":null,"abstract":"This paper describes a current memory cell integrated in a fully depleted SOI process. The circuit was designed to maintain its performance up to 225/spl deg/C. An application of the memory is demonstrated by measurements of a current doubler for an A/D converter.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819837","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper describes a current memory cell integrated in a fully depleted SOI process. The circuit was designed to maintain its performance up to 225/spl deg/C. An application of the memory is demonstrated by measurements of a current doubler for an A/D converter.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
