C. Hafer, M. Von Thun, M. Leslie, F. Sievert, A. Jordan
{"title":"Commercially Designed and Manufactured SDRAM SEE Data","authors":"C. Hafer, M. Von Thun, M. Leslie, F. Sievert, A. Jordan","doi":"10.1109/REDW.2010.5619497","DOIUrl":null,"url":null,"abstract":"Abstract-- A commercially designed and manufactured 512Mb SDRAM is Single Event Latchup (SEL) immune and 100 krad(Si) TID tolerant. It is packaged for application use into both a 2.5Gb and a 3Gb MCM configuration [1]. The Single Event Effects (SEE) performance is reported.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Abstract-- A commercially designed and manufactured 512Mb SDRAM is Single Event Latchup (SEL) immune and 100 krad(Si) TID tolerant. It is packaged for application use into both a 2.5Gb and a 3Gb MCM configuration [1]. The Single Event Effects (SEE) performance is reported.
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