{"title":"Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)","authors":"J. Heidecker, G. Allen, D. Sheldon","doi":"10.1109/REDW.2010.5619499","DOIUrl":null,"url":null,"abstract":"A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
Abstract
A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).
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