Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619504
A. Schuttauf, S. Rakers, C. Daniel
We have performed heavy ion tests of the ATmega128 and AT90CAN128 micro controller. These COTS devices have shown a quite different sensitivity to SEL/SEU errors, where the current consumption showed a step like behaviour. Detailed measurements, analyses and on-orbit rates are presented.
{"title":"Radiation Test of 8 Bit Microcontrollers ATmega128 & AT90CAN128","authors":"A. Schuttauf, S. Rakers, C. Daniel","doi":"10.1109/REDW.2010.5619504","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619504","url":null,"abstract":"We have performed heavy ion tests of the ATmega128 and AT90CAN128 micro controller. These COTS devices have shown a quite different sensitivity to SEL/SEU errors, where the current consumption showed a step like behaviour. Detailed measurements, analyses and on-orbit rates are presented.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"252 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126829257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619510
Radu Dumitru, C. Hafer, Tzu-Wen Wu, R. Rominger, H. Gardner, P. Milliken, Kevin Bruno, T. Farris
Radiation hardness characterization has been performed on a RadHard-by-Design ASIC Library designed using a 130nm commercial fab process. Test chip results are presented illustrating the ASIC library performance and radiation hardness response.
{"title":"Radiation Hardness Characterization of a 130nm ASIC Library Technology","authors":"Radu Dumitru, C. Hafer, Tzu-Wen Wu, R. Rominger, H. Gardner, P. Milliken, Kevin Bruno, T. Farris","doi":"10.1109/REDW.2010.5619510","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619510","url":null,"abstract":"Radiation hardness characterization has been performed on a RadHard-by-Design ASIC Library designed using a 130nm commercial fab process. Test chip results are presented illustrating the ASIC library performance and radiation hardness response.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126240146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619503
A. Kelly, P. Fleming, Ronald D. Brown, Frankie Wong
Characterization of single event and low dose-rate TID effects in National Semiconductor's DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.
{"title":"Single Event and Low Dose-Rate TID Effects in the DS16F95 RS-485 Transceiver","authors":"A. Kelly, P. Fleming, Ronald D. Brown, Frankie Wong","doi":"10.1109/REDW.2010.5619503","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619503","url":null,"abstract":"Characterization of single event and low dose-rate TID effects in National Semiconductor's DS16F95 Radiation-Hardened RS-485 Transceiver is eported. Onset LET for upsetof less than 5 MeV-cm2/mg was observed, and a dependency on operating condition was established. Samples under ELDRS nvestigation adhered to electrical specification after irradiation to 30 krd(Si) at 10 mrd(Si)/s.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125123048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619498
K. Kruckmeyer, R. Eddy, Alex Szczapa, B. Brown, Tom Santiago
National Semiconductor's LM98640QML is a complex signal processing solution interface for CCDs and CMOS imagers used in focal plane arrays and other imaging systems. This complex system on a chip (SOC) consists of an integrated 14 bit analog-to-digital converter (ADC), correlated double sampler, delay-locked loop (DLL), serial interface, digital-to-analog converters (DAC), programmable variable gain amplifiers and other components. Single event effect (SEE) characterization of a complex, precision SOC with many different operating modes can present significant challenges. Heavy ion test challenges, solutions and results are presented here.
{"title":"SEE Testing of National Semiconductor's LM98640QML System on a Chip for Focal Plane Arrays and Other Imaging Systems","authors":"K. Kruckmeyer, R. Eddy, Alex Szczapa, B. Brown, Tom Santiago","doi":"10.1109/REDW.2010.5619498","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619498","url":null,"abstract":"National Semiconductor's LM98640QML is a complex signal processing solution interface for CCDs and CMOS imagers used in focal plane arrays and other imaging systems. This complex system on a chip (SOC) consists of an integrated 14 bit analog-to-digital converter (ADC), correlated double sampler, delay-locked loop (DLL), serial interface, digital-to-analog converters (DAC), programmable variable gain amplifiers and other components. Single event effect (SEE) characterization of a complex, precision SOC with many different operating modes can present significant challenges. Heavy ion test challenges, solutions and results are presented here.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134331586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619496
E. Normand, L. Dominik
A cross comparison of SEU, SEFI and SEL responses in >30 devices (SRAMs µprocessors and FPGAs) using different neutron/proton beams leads to observation that SEU and SEFI cross sections from 14 MeV neutrons are within <2 compared to LANL neutron beam.
{"title":"Cross Comparison Guide for Results of Neutron SEE Testing of Microelectronics Applicable to Avionics","authors":"E. Normand, L. Dominik","doi":"10.1109/REDW.2010.5619496","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619496","url":null,"abstract":"A cross comparison of SEU, SEFI and SEL responses in >30 devices (SRAMs µprocessors and FPGAs) using different neutron/proton beams leads to observation that SEU and SEFI cross sections from 14 MeV neutrons are within <2 compared to LANL neutron beam.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121838100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619491
R. Koga, P. Yu, J. George, S. Bielat
SEE sensitivity to protons and heavy ions is examined with several 2 Gb DDR2 SDRAM device types. Upsets in memory elements as well as in control circuit sections have been measured.
{"title":"Sensitivity of 2 Gb DDR2 SDRAMs to Protons and Heavy Ions","authors":"R. Koga, P. Yu, J. George, S. Bielat","doi":"10.1109/REDW.2010.5619491","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619491","url":null,"abstract":"SEE sensitivity to protons and heavy ions is examined with several 2 Gb DDR2 SDRAM device types. Upsets in memory elements as well as in control circuit sections have been measured.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132961440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619489
S. Guertin, F. Irom
Recent single event effect (SEE) test results for the Freescale 7447A and IBM 750FX microprocessors, and Marvell 64460 bridge chips are reported. The 7447A and 750FX results are compared to earlier work. The 64460 represents unique data. The data extraction methods for each test type are described. The 7447A and 750FX were found to have a single event upset (SEU) threshold of about 1 MeV-cm²/mg and saturated cross section of 2e-9 cm²/bit. Both devices have proton cross sections of about 1e-14cm²/bit and proton thresholds below 20 MeV. The 64460 was shown to have functional interrupts similar to single event latchup with threshold below 1 MeV-cm²/g and saturated cross section around 1 cm².
{"title":"Recent Results for PowerPC Processor and Bridge Chip Testing","authors":"S. Guertin, F. Irom","doi":"10.1109/REDW.2010.5619489","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619489","url":null,"abstract":"Recent single event effect (SEE) test results for the Freescale 7447A and IBM 750FX microprocessors, and Marvell 64460 bridge chips are reported. The 7447A and 750FX results are compared to earlier work. The 64460 represents unique data. The data extraction methods for each test type are described. The 7447A and 750FX were found to have a single event upset (SEU) threshold of about 1 MeV-cm²/mg and saturated cross section of 2e-9 cm²/bit. Both devices have proton cross sections of about 1e-14cm²/bit and proton thresholds below 20 MeV. The 64460 was shown to have functional interrupts similar to single event latchup with threshold below 1 MeV-cm²/g and saturated cross section around 1 cm².","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133917790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619502
N. V. van Vonno, L. Pearce, G. M. Wood, J. D. White, E. Thomson, T. Bernard, P. J. Chesley, R. Hood
We report results of total dose and SEE testing of the ISL7884xASRH hardened single-ended current mode PWM controller including discussion of part design, process and radiation testing results. The part is implemented in submicron BiCMOS.
{"title":"Total Dose and Single Event Testing of a Hardened Single-Ended Current Mode PWM Controller","authors":"N. V. van Vonno, L. Pearce, G. M. Wood, J. D. White, E. Thomson, T. Bernard, P. J. Chesley, R. Hood","doi":"10.1109/REDW.2010.5619502","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619502","url":null,"abstract":"We report results of total dose and SEE testing of the ISL7884xASRH hardened single-ended current mode PWM controller including discussion of part design, process and radiation testing results. The part is implemented in submicron BiCMOS.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133182910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619501
N. V. van Vonno, L. Pearce, J. S. Gill, H. W. Satterfield, E. T. Thomson, T. E. Fobes, A. P. Williams, P. J. Chesley
We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.
{"title":"Total Dose and Single Event Testing of a Hardened Point of Load Regulator","authors":"N. V. van Vonno, L. Pearce, J. S. Gill, H. W. Satterfield, E. T. Thomson, T. E. Fobes, A. P. Williams, P. J. Chesley","doi":"10.1109/REDW.2010.5619501","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619501","url":null,"abstract":"We report the results of total dose and single-event effects testing of the ISL70001SRH hardened point of load (POL) voltage regulator and discuss part design, performance and applications. The part is implemented in a submicron BiCMOS process and uses integrated power MOSFET switching transistors.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133510008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619499
J. Heidecker, G. Allen, D. Sheldon
A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).
{"title":"Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)","authors":"J. Heidecker, G. Allen, D. Sheldon","doi":"10.1109/REDW.2010.5619499","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619499","url":null,"abstract":"A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123524168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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