Cointegration of optoelectronics and submicron CMOS

Abstract

Two specific issues impacting the eventual application of optical interconnection in full-wafer systems are addressed. The first issue is growth of GaAs semiconductor regions within a silicon wafer scale integration (WSI) or multichip module (MCM) substrate containing high performance silicon CMOS circuitry, in order to cointegrate optical and silicon VLSI devices. The second concerns the addition of VLSI electronics to obtain a detector array which can electronically establish alignment with an incident bundle of optical beams. These issues are considered from the perspective of massively parallel optical interconnections between packaged wafer-level components.<>