C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button
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引用次数: 2
Abstract
We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.
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