An investigation about the limitation of strained-Si technology

M. Liao, L. Yeh, J. C. Lu, M. H. Yu, L. T. Wang, J. Wu, P. Jeng, T. Lee, S. Jang
{"title":"An investigation about the limitation of strained-Si technology","authors":"M. Liao, L. Yeh, J. C. Lu, M. H. Yu, L. T. Wang, J. Wu, P. Jeng, T. Lee, S. Jang","doi":"10.1109/VTSA.2009.5159277","DOIUrl":null,"url":null,"abstract":"Strained-Si technology is the Holy Grail for present semiconductor industry and is used extensively to boost the device performance, recently. However, the limitation of strained-Si technology has greatly perplexed us and need to investigate in detail. In this work, the low temperature ballistic measurement enables us to discriminate the origin of mobility enhancement under stress from the reduction of effective mass and/or the influence of different scattering mechanisms. It is found that the electron mobility enhancement under stress will become less sensitive when the gate length of device reaches ∼100 nm. The real mechanism of this phenomenon have be proved to the characteristic of device ballistic transport and the optimal stress design developed in this work can further extend the limitation of Strained-Si technology to the smaller gate length region (technology node) (Fig. 1).","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159277","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Strained-Si technology is the Holy Grail for present semiconductor industry and is used extensively to boost the device performance, recently. However, the limitation of strained-Si technology has greatly perplexed us and need to investigate in detail. In this work, the low temperature ballistic measurement enables us to discriminate the origin of mobility enhancement under stress from the reduction of effective mass and/or the influence of different scattering mechanisms. It is found that the electron mobility enhancement under stress will become less sensitive when the gate length of device reaches ∼100 nm. The real mechanism of this phenomenon have be proved to the characteristic of device ballistic transport and the optimal stress design developed in this work can further extend the limitation of Strained-Si technology to the smaller gate length region (technology node) (Fig. 1).
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应变硅技术的局限性研究
应变硅技术是当前半导体工业的圣杯,近年来被广泛用于提高器件性能。然而,应变硅技术的局限性一直困扰着我们,需要深入研究。在这项工作中,低温弹道测量使我们能够从有效质量的减少和/或不同散射机制的影响中区分应力下迁移率增强的来源。发现当器件栅长达到~ 100 nm时,应力下电子迁移率的增强变得不那么敏感。这一现象的真实机理已被证明是器件弹道输运的特征,本工作所开发的最优应力设计可以进一步将应变硅技术的限制扩展到更小的栅长区域(技术节点)(图1)。
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