TDDB chip reliability in copper interconnects

M. Bashir, Daehyun Kim, S. Lim, L. Milor
{"title":"TDDB chip reliability in copper interconnects","authors":"M. Bashir, Daehyun Kim, S. Lim, L. Milor","doi":"10.1109/IIRW.2010.5706503","DOIUrl":null,"url":null,"abstract":"Backend time dependent dielectric breakdown (TDDB) degrades the reliability of circuits with copper interconnects. We use test data to develop a methodology to evaluate chip lifetimes, because of backend TDDB, from layout statistics. We identify features in a layout that are critical to backend reliability, present a model to incorporate those features in determining chip lifetimes, and study the effect of different layout optimizations on chip lifetime.","PeriodicalId":332664,"journal":{"name":"2010 IEEE International Integrated Reliability Workshop Final Report","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2010.5706503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Backend time dependent dielectric breakdown (TDDB) degrades the reliability of circuits with copper interconnects. We use test data to develop a methodology to evaluate chip lifetimes, because of backend TDDB, from layout statistics. We identify features in a layout that are critical to backend reliability, present a model to incorporate those features in determining chip lifetimes, and study the effect of different layout optimizations on chip lifetime.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
铜互连中的TDDB芯片可靠性
后端时间相关介质击穿(TDDB)降低了铜互连电路的可靠性。我们使用测试数据来开发一种方法来评估芯片寿命,因为后端TDDB,从布局统计。我们确定了对后端可靠性至关重要的布局特征,提出了一个将这些特征纳入确定芯片寿命的模型,并研究了不同布局优化对芯片寿命的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Defects in low-κ dielectrics and etch stop layers for use as interlayer dielectrics in ULSI Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS The impact of recovery on BTI reliability assessments A novel virtual age reliability model for Time-to-Failure prediction 3D simulation of charge collection and SEU of 0.13µm partially depleted SOI SRAM
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1