{"title":"Enhanced Low Dose Rate Sensitivity of PNP Transistor at Extreme-Low Dose Rates","authors":"Mohan Liu, Wu Lu, Xin Wang, Xing Yu, Jing Sun, Xiaolong Li, Xinyu Wei, S. Yao, Weilei Shi, Cheng-fa He, Q. Guo","doi":"10.1109/RADECS45761.2018.9328712","DOIUrl":null,"url":null,"abstract":"The ELDRS of PNP transistors were investigated at dose rates of 10, 5, 1, and 0.1mrad(Si)/s and dose rate 100rad(Si)/s, while the evaluation of the ELDRS under the high and dose rate are performed with the Temperature-Switching-Approach Irradiation. The estimated results using Temperature-Switching-Approach were in good agreement with the experimental data.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS45761.2018.9328712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The ELDRS of PNP transistors were investigated at dose rates of 10, 5, 1, and 0.1mrad(Si)/s and dose rate 100rad(Si)/s, while the evaluation of the ELDRS under the high and dose rate are performed with the Temperature-Switching-Approach Irradiation. The estimated results using Temperature-Switching-Approach were in good agreement with the experimental data.
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