F. Piazza, C. Boccaccio, S. Bruyère, Riccardo Cea, Bill Clark, N. Degors, Christopher N. Collins, A. Gandolfo, A. Gilardini, E. Gomiero, Pierre-Marie Mans, G. Mastracchio, D. Pacelli, N. Planes, J. Simon, M. Weybright, A. Maurelli
{"title":"High performance Flash memory for 65 nm embedded automotive application","authors":"F. Piazza, C. Boccaccio, S. Bruyère, Riccardo Cea, Bill Clark, N. Degors, Christopher N. Collins, A. Gandolfo, A. Gilardini, E. Gomiero, Pierre-Marie Mans, G. Mastracchio, D. Pacelli, N. Planes, J. Simon, M. Weybright, A. Maurelli","doi":"10.1109/IMW.2010.5488312","DOIUrl":null,"url":null,"abstract":"In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the Flash cell and the related HV MOS and the results obtained on a 4Mbit Flash array are very promising.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"262 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the Flash cell and the related HV MOS and the results obtained on a 4Mbit Flash array are very promising.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
