S. Hu, M. Peters, D. Young, A. Gossard, L. Coldren
{"title":"Submilliamp-threshold InGaAs/GaAs quantum-well ridge-waveguide lasers with impurity-induced disordering","authors":"S. Hu, M. Peters, D. Young, A. Gossard, L. Coldren","doi":"10.1109/DRC.1995.496303","DOIUrl":null,"url":null,"abstract":"We report a significant reduction of threshold current in lasers from a material which has two strained-layer In/sub 0.2/Ga/sub 0.8/As/GaAs QW inside a linearly-graded-index separate-confinement waveguide structure. The ridges were etched by Cl/sub 2/ reactive ion etching. Self-aligned Si deposition and Zn diffusion were used in the device fabrication. The resultant active stripe width was controlled by the Si diffusion time. For example, a 0.3-/spl mu/m-wide active stripe was achieved from the originally 1.5-/spl mu/m-wide device after a 90 min diffusion at 850 C. As a result, threshold currents as low as 0.7 mA for pulsed operation and 0.9 mA for cw operation have been obtained from an uncoated 137-/spl mu/m-long and 0.3-/spl mu/m-wide device without special heat sinking treatment.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We report a significant reduction of threshold current in lasers from a material which has two strained-layer In/sub 0.2/Ga/sub 0.8/As/GaAs QW inside a linearly-graded-index separate-confinement waveguide structure. The ridges were etched by Cl/sub 2/ reactive ion etching. Self-aligned Si deposition and Zn diffusion were used in the device fabrication. The resultant active stripe width was controlled by the Si diffusion time. For example, a 0.3-/spl mu/m-wide active stripe was achieved from the originally 1.5-/spl mu/m-wide device after a 90 min diffusion at 850 C. As a result, threshold currents as low as 0.7 mA for pulsed operation and 0.9 mA for cw operation have been obtained from an uncoated 137-/spl mu/m-long and 0.3-/spl mu/m-wide device without special heat sinking treatment.
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