{"title":"Quantum Well Intersubband Infrared Detectors","authors":"B. Levine","doi":"10.1364/qwoe.1989.wb1","DOIUrl":null,"url":null,"abstract":"Transport physics, device performance (high responsivity, high detectivity, high speed, broad bandwidth) and potential advantages (over HgCdTe) of 10 μm GaAs/AlxGa1−xAs superlattice infrared detectors will be discussed.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qwoe.1989.wb1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Transport physics, device performance (high responsivity, high detectivity, high speed, broad bandwidth) and potential advantages (over HgCdTe) of 10 μm GaAs/AlxGa1−xAs superlattice infrared detectors will be discussed.
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