L. Liu, X. Sun, B. Sun, J. Kang, Y. Wang, X. Liu, R. Han, G. Xiong
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引用次数: 7
Abstract
The RS behaviors of stoichiometric and nonstoichiometric CeOx films were studied. Current compliance-free resistive switching was achieved in the nonstoichiometric CeOx film, which are helpful to remove the limitation of current compliance to simplify RRAM circuits design.
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