{"title":"Irradiation Effects of 1 MeV Electron on Monolayer MoS2 Field Effect Transistors","authors":"Yanqing Zhang, Chunhua Qi, S. Dong, Mingxue Huo, Guoliang Ma, Xuesong Zheng, Zhengyong Hua, Jiaming Zhou, Heyi Li, Chaoming Liu, Yidan Wei, Tianqi Wang","doi":"10.1109/IPFA47161.2019.8984891","DOIUrl":null,"url":null,"abstract":"The effect of irradiation on monolayer MoS2 FET (field effect transistor) with 1 MeV electron beams was investigated. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) was measured before and after irradiation. The results show that electron irradiation produces a strong desulfurization effect. The electrical characteristics of the device were measured with fluence condition of 1.0×1012 and 3.0×1012cm-2. The channel leakage increases after irradiation while transfer and output current decrease. This phenomenon can be attributed to the combination of the states at the SiO2/MoS2 interfaces and Coulomb scattering. Our study will enhance the understanding of the influence of 1 MeV electron on MoS2-based nanoelectronics devices.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of irradiation on monolayer MoS2 FET (field effect transistor) with 1 MeV electron beams was investigated. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) was measured before and after irradiation. The results show that electron irradiation produces a strong desulfurization effect. The electrical characteristics of the device were measured with fluence condition of 1.0×1012 and 3.0×1012cm-2. The channel leakage increases after irradiation while transfer and output current decrease. This phenomenon can be attributed to the combination of the states at the SiO2/MoS2 interfaces and Coulomb scattering. Our study will enhance the understanding of the influence of 1 MeV electron on MoS2-based nanoelectronics devices.
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