R. Takayanagi, K. Taniguchi, M. Hoya, N. Kanai, T. Tsuji, M. Hori, Y. Ikeda, K. Maruyama, I. Kawamura
{"title":"3.3kV Power Module for Electric Distribution Equipment with SiC Trench-Gate MOSFET","authors":"R. Takayanagi, K. Taniguchi, M. Hoya, N. Kanai, T. Tsuji, M. Hori, Y. Ikeda, K. Maruyama, I. Kawamura","doi":"10.23919/ICEP.2019.8733532","DOIUrl":null,"url":null,"abstract":"3.3 kV / 200 A All-SiC module with trench-gate SiC MOSFETs is developed for static var compensator (SVC), a type of the electric distribution equipment. This module has the structural feature; resin-mold single-switch units are arrayed and electrically connected by bus-bars to make the circuit configuration dual (2-in-1). This structure leads to the smaller stack and the higher long-term reliability. Applied trench-gate SiC MOSFETs, lower loss is also accomplished. ON-state resistance is reduced around 10%. In addition, 60% reduction of total switching loss is achieved. These characteristics of low energy loss can contribute to downsizing of SVC equipment as well as energy saving.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
3.3 kV / 200 A All-SiC module with trench-gate SiC MOSFETs is developed for static var compensator (SVC), a type of the electric distribution equipment. This module has the structural feature; resin-mold single-switch units are arrayed and electrically connected by bus-bars to make the circuit configuration dual (2-in-1). This structure leads to the smaller stack and the higher long-term reliability. Applied trench-gate SiC MOSFETs, lower loss is also accomplished. ON-state resistance is reduced around 10%. In addition, 60% reduction of total switching loss is achieved. These characteristics of low energy loss can contribute to downsizing of SVC equipment as well as energy saving.