Meng Zhang, Xiaotong Ma, Zhendong Jiang, Sunbin Deng, Guijun Li, Rongsheng Chen, Yan Yan, M. Wong, H. Kwok
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引用次数: 1
Abstract
Light-illumination-induced degradation and its long-term recovery in indium-tin-zinc oxide (ITZO) thin-film transistors (TFTs) are investigated. Negative threshold voltage shift and subthreshold degradation are observed under light of 546.1 nm with 14.92 mW/cm2. Short-term recovery and long-term recovery of ITZO TFT exhibit two different characteristics. Incorporated with TCAD simulations, the degradation mechanism and recovery mechanism are tentatively discussed.
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