NAND Flash Scaling Beyond 20nm

Y. Koh
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引用次数: 53

Abstract

With the advent of prevailing mobile devices in our daily lives, the densities of nonvolatile memory, especially NAND Flash suitable for mobile devices become higher and higher, and Flash memory applications will be constantly increased in the future due to their non-volatility and high capacity. Therefore it is very meaningful and important to summarize where NAND Flash memory technology is now, what kinds of challenges have to be overcome, and what the promising candidates will be in the future. In this paper, we present the major scaling issues and performance requirements for NAND Flash with advancing technology nodes, and we also show directions for new emerging technologies beyond 20 nm technology node.
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NAND闪存缩放超过20nm
随着我们日常生活中移动设备的普及,非易失性存储器,特别是适用于移动设备的NAND闪存的密度越来越高,Flash存储器由于其非易失性和高容量的特点,在未来的应用将不断增加。因此,总结NAND闪存技术的现状、需要克服的挑战以及未来的发展前景是非常有意义和重要的。在本文中,我们提出了先进技术节点的NAND闪存的主要缩放问题和性能要求,并指出了20纳米技术节点以外的新兴技术的发展方向。
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