T. Jonsson, C. Svensson, L. Drugge, Ghayathri Suriyamoorthy
{"title":"High current transistor packaging for very low on-resistance","authors":"T. Jonsson, C. Svensson, L. Drugge, Ghayathri Suriyamoorthy","doi":"10.23919/empc53418.2021.9584976","DOIUrl":null,"url":null,"abstract":"A high current, low voltage, single sided MOSFET device has been designed and experimentally verified. The device is based on a die fabricated in standard CMOS and a special package based on PCB technique fabricated in a standard PCB process. The transistor, its special package and its mounting on a mother board are carefully analyzed through simulation. The experimental verification indicates an on-resistance less than 0.5mohm, corresponding to a specific on-resistance of 6.7mohm-mm2.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/empc53418.2021.9584976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A high current, low voltage, single sided MOSFET device has been designed and experimentally verified. The device is based on a die fabricated in standard CMOS and a special package based on PCB technique fabricated in a standard PCB process. The transistor, its special package and its mounting on a mother board are carefully analyzed through simulation. The experimental verification indicates an on-resistance less than 0.5mohm, corresponding to a specific on-resistance of 6.7mohm-mm2.
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