Sub-10 µA reset in NiO-based resistive switching memory (RRAM) cells

Abstract

NiO-based resistive-switching memory (RRAM) is attracting a growing research interest for high-density non-volatile storage applications. One of the most difficult challenges for RRAM-based high-density memories is the high current necessary for the reset operation (Ireset), which limits the possibilities of scaling for the select diode in the cross-bar memory array. This work addresses the scalability of the reset current Ireset in NiO-based RRAM by limiting the set current through an integrated series MOSFET. Ireset is shown to be controllable down to below 10 µA. The consequences of these findings for the select diode in the cross-bar array structure are finally discussed.