Z. Chbili, J. Chbili, J. Campbell, J. Ryan, M. Lahbabi, D. Ioannou, K. Cheung
{"title":"Massively parallel TDDB testing: SiC power devices","authors":"Z. Chbili, J. Chbili, J. Campbell, J. Ryan, M. Lahbabi, D. Ioannou, K. Cheung","doi":"10.1109/IIRW.2015.7437075","DOIUrl":null,"url":null,"abstract":"This paper presents a novel experimental setup to perform wafer level TDDB testing. The massively parallel reliability system is capable of testing a total of 3000 probes simultaneously. The system can perform tests at temperatures up to 400 °C for high temperature applications (SiC). We also present TDDB results of SiO2 on SiC showing higher TDDB lifetime and field acceleration compared to SiO2 on Si.","PeriodicalId":120239,"journal":{"name":"2015 IEEE International Integrated Reliability Workshop (IIRW)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2015.7437075","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a novel experimental setup to perform wafer level TDDB testing. The massively parallel reliability system is capable of testing a total of 3000 probes simultaneously. The system can perform tests at temperatures up to 400 °C for high temperature applications (SiC). We also present TDDB results of SiO2 on SiC showing higher TDDB lifetime and field acceleration compared to SiO2 on Si.
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