Semi-insulating silicon for microwave integrated circuits

Abstract

In silicon many of the transition metals have states near the center of the gap and so can be used to form semi-insulating wafers. In this paper calculated and measured resistivities of silicon as a function of substrate doping for gold doped n-type and silver doped p-type silicon are presented. Arrhenius plots of the effective diffusion coefficient of gold in Si/sub 3/N/sub 4/ diffusion barriers are also measured. A structure for forming semi-insulating silicon with an upper conductive layer using a wafer bonding technique is developed.